Substrate temperature changes during MBE growth of GaMnAs

机译：在Gamnas的mBE生长期间，衬底温度变化

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Remarkably big increase of the substrate temperature during thelow-temperature MBE growth of GaMnAs layers is observed by means of band gapspectroscopy. It is explained and simulated in terms of changes in theabsorption/emission characteristics of the growing layer. Options for thetemperature variation damping are discussed.

机译：通过带隙谱学观察到GaMnAs层在低温MBE生长过程中衬底温度显着增加。根据生长层的吸收/发射特性的变化来解释和模拟。讨论了温度变化阻尼的选项。

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Novak, V.; Olejnik, K.; Cukr, M.; Smrcka, L.; Remes, Z.; Oswald, J.;
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年度 2007
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专利

1. Substrate temperature changes during molecular beam epitaxy growth of GaMnAs [J] . V. Novak, K. Olejnik, M. Cukr, Journal of Applied Physics . 2007,第8期

机译：GaMnAs分子束外延生长过程中衬底温度的变化
2. Graphene films grown at low substrate temperature and the growth model by using MBE technique [J] . Meng-Yu Lin, Wei-Ching Guo, Meng-Hsun Wu, Journal of Crystal Growth . 2013,第sepa1期

机译：在低衬底温度下生长的石墨烯薄膜及其MBE技术的生长模型
3. Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE [J] . Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Basanta Roul, Journal of Crystal Growth . 2011,第1期

机译：RF-MBE在r面蓝宝石衬底上的非极性a面GaN中的生长温度诱导效应
4. The Effect of Growth Temperature and Substrate Misorientation on Degree of Order an Antiphase Domain Size in Ga_0.52In_0.48P Epilayers Grown on GaAs(001) Substrates by GS-MBE [C] . C.Meenakam, A.E.Staton-Bevan, S.P.Najda, Electron microscopy of semiconducting materials and ULSI devices . 1998

机译：生长温度和衬底取向错误对GS-MBE在GaAs（001）衬底上生长的Ga_0.52In_0.48P外延层中反相畴尺寸有序度的影响
5. Growth of highly ordered indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide quantum dots on nano-patterned substrates by MBE. [D] . Guo, Wei. 2008

机译：MBE在纳米图案化的衬底上生长高度有序的砷化铟/砷化镓和砷化铟镓/砷化镓量子点。
6. Low-Temperature In-Induced Holes Formation in Native-SiOx/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires [O] . Rodion R. Reznik, Konstantin P. Kotlyar, Vladislav O. Gridchin, 2020

机译：用于自然-SiOx / Si（111）底物的低温诱导孔形成用于自催化的GaAs纳米线的生长
7. Curie temperature and carrier concentration gradients in MBE grown GaMnAs layers [O] . Koeder, A., Frank, S., Schoch, W., 2002

机译：mBE生长中的居里温度和载流子浓度梯度 Gamnas层
8. Investigation of GaAs Films Grown by MBE (Molecular Beam Epitaxy) at Low Substrate Temperatures and Growth Rates. [R] . Metze, G. M., Calawa, A. R., Mavroides, J. G. 1983

机译：mBE（分子束外延）在低衬底温度和生长速率下生长的Gaas薄膜的研究。

Substrate temperature changes during MBE growth of GaMnAs

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